Size-dependent surface luminescence in ZnO nanowires

نویسندگان

  • Ilan Shalish
  • Henryk Temkin
  • Venkatesh Narayanamurti
چکیده

Nanometer sized whiskers ~nanowires! offer a vehicle for the study of size-dependent phenomena. While quantum-size effects are commonly expected and easily predicted, size reduction also causes more atoms to be closer to the surface. Here we show that intensity relations of below-band-gap and band-edge luminescence in ZnO nanowires depend on the wire radius. Assuming a surface layer wherein the surface-recombination probability is 1 ~surface-recombination approximation!, we explain this size effect in terms of bulk-related to surface-related material-volume ratio that varies almost linearly with the radius. This relation supports a surface-recombination origin for the deep-level luminescence we observe. The weight of this surfaceluminescence increases as the wire radius decreases at the expense of the band-edge emission. Using this model, we obtain a radius of 30 nm, below which in our wires surface-recombination prevails. More generally, our results suggest that in quantum-size nanowires, surface-recombination may entirely quench band-to-band recombination, presenting an efficient sink for charge carriers that unless deactivated may be detrimental for electronic devices.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High resolution, two-dimensional image mapping of ZnO nanowires by confocal microphotoluminescence and microraman spectroscopy.

High-quality ZnO nanowires were synthesized using both Au catalysts and ZnO seeds by chemical vapor depositionon basal plane sapphire substrates. The nanowires were hexagonal and aligned with their c-axis closely perpendicular to the sapphire substrate surface. The structural characteristics of the nanowiresgrown using the different catalysts/seeds were compared using scanning electron microsco...

متن کامل

Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.

Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smoo...

متن کامل

Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders.

Sulfur-doped zinc oxide (ZnO) nanowires grown on gold-coated silicon substrates inside a horizontal tube furnace exhibit remarkably strong visible wavelength emission with a quantum efficiency of 30%, an integrated intensity 1600 times stronger than band edge ultraviolet emission, and a spectral distribution that closely matches the dark-adapted human eye response. By comparatively studying sul...

متن کامل

In situ observation of size-scale effects on the mechanical properties of ZnO nanowires.

In this investigation, the size-scale in mechanical properties of individual [0001] ZnO nanowires and the correlation with atomic-scale arrangements were explored via in situ high-resolution transmission electron microscopy (TEM) equipped with atomic force microscopy (AFM) and nanoindentation (NI) systems. The Young's modulus was determined to be size-scale-dependent for nanowires with diameter...

متن کامل

ZnO Nanowire/p-GaN Heterojunction LEDs

This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004